max2601, max2602 3.6v、1w rf功率晶体管,适合900mhz应用
max2601, max2602 概述
the max2601/max2602 are rf power transistors optimized for use in portable cellular and wireless equipment that operates from three nicd/nimh cells or one li-ion cell. these transistors deliver 1w of rf power from a 3.6v supply with efficiency of 58% when biased for constant-envelope applications (e.g., fm or fsk). for nadc (is-54) operation, they deliver 29dbm with -28dbc acpr from a 4.8v supply.
the max2601 is a high-performance silicon bipolar rf power transistor. the max2602 includes a high-performance silicon bipolar rf power transistor, and a biasing diode that matches the thermal and process characteristics of the power transistor. this diode is used to create a bias network that accurately controls the power transistor's collector current as the temperature changes.
the max2601/max2602 can be used as the final stage in a discrete or module power amplifier. silicon bipolar technology eliminates the need for voltage inverters and sequencing circuitry, as required by gaasfet power amplifiers. furthermore, a drain switch is not required to turn off the max2601/max2602. this increases operating time in two ways: it allows lower system end-of-life battery voltage, and it eliminates the wasted power from a drain-switch device.
the max2601/max2602 are available in thermally enhanced, 8-pin so packages, which are screened to the extended temperature range (-40°c to +85°c). the max2602 is also available in die form.
max2602/max2601 pdf datasheet
max2601, max2602 关键特性
low voltage: operates from 1 li-ion or 3 nicd/nimh batteries
dc-to-microwave operating range
1w output power at 900mhz
on-chip diode for accurate biasing (max2602)
low-cost silicon bipolar technology
does not require negative bias or supply switch
high efficiency: 58%
max2601, max2602 应用/使用
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